MTD1P40E Datasheet, PDF (1/12 Pages) ON Semiconductor – P−Channel DPAK Power MOSFET

MTD1P40E
Preferred Device
Advance Information
Power MOSFET
1 Amp, 400 Volts
P−Channel DPAK
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition this advanced high voltage
MOSFET is designed to withstand high energy in the avalanche and
commutation modes. The energy efficient design also offers a
drain−to−source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
http://onsemi.com
1 AMPERES
400 VOLTS
R_DS(on) = 8 Ω
P−Channel
D
G
S
MARKING
DIAGRAM
4
12
3
Y
WW
T
CASE 369A
DPAK
STYLE 2
= Year
= Work Week
= MOSFET
YWW
T
1P40E
PIN ASSIGNMENT
4
Drain
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2004
1
August, 2004 − Rev. XXX
1 23
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MTD1P40E
MTD1P40E1
DPAK
DPAK
75 Units/Rail
75 Units/Rail
MTD1P40ET4
DPAK 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MTD1P40E/D