MTB9N25E Datasheet, PDF (1/12 Pages) Motorola, Inc – TMOS POWER FET 9.0 AMPERES 250 VOLTS

MTB9N25E
Designer’s™ Data Sheet
TMOS E−FET.™
High Energy Power FET
D²PAK for Surface Mount
N−Channel Enhancement−Mode Silicon
Gate
The D²PAK package has the capability of housing a larger die than
any existing surface mount package which allows it to be used in
applications that require the use of surface mount components with
higher power and lower R_DS(on) capabilities. This advanced TMOS
E−FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain−to−source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured — Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
http://onsemi.com
TMOS POWER FET
9.0 AMPERES, 250 VOLTS
R_DS(on) = 0.45 W
D²PAK
CASE 418B−02
Style 2
D
®
G
S
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 1
Publication Order Number:
MTB9N25E/D