MTB75N06HD Datasheet, PDF (1/12 Pages) Motorola, Inc – TMOS POWER FET 75 AMPERES 60 VOLTS

MTB75N06HD
Preferred Device
Power MOSFET
75 Amps, 60 Volts
N−Channel D²PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured − Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ T_C = 25°C
(Note 1.)
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
60
Vdc
60
Vdc
± 20
Vdc
± 30
Vpk
75
Adc
50
225
Apk
125 Watts
1.0
W/°C
2.5 Watts
Operating and Storage Temperature
Range
− 55 to 150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 10 Vdc,
I_L = 75 Apk, L = 0.177 mH, R_G = 25 Ω)
Thermal Resistance
− Junction to Case
− Junction to Ambient
− Junction to Ambient (Note 1.)
E_AS
R_θJC
R_θJA
R_θJA
500
mJ
1.0
°C/W
62.5
50
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8″ from case for 10
seconds
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
http://onsemi.com
75 AMPERES
60 VOLTS
R_DS(on) = 10 mΩ
N−Channel
D
G
S
12
3
4
D²PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
T75N06HD
YWW
12
Gate Drain
3
Source
T75N06HD = Device Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB75N06HD
MTB75N06HDT4
D²PAK
D²PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
September, 2004 − Rev.xxx
Publication Order Number:
MTB75N06HD/D