MTB75N05HD Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 75 AMPERES 50 VOLTS

MTB75N05HD
Preferred Device
Power MOSFET
75 Amps, 50 Volts
N−Channel D²PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured − Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
w These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
V_DSS
50
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
Gate−to−Source Voltage − Continuous
V_DGR
V_GS
50
± 20
Drain Current − Continuous
I_D
75
Drain Current − Continuous @ 100°C
I_D
65
Drain Current − Single Pulse (t_p ≤ 10 μs)
I_DM
225
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ T_A = 25°C
(minimum footprint, FR−4 board)
P_D
125
1.0
2.5
Operating and Storage Temperature
Range
T_J, T_stg − 55 to
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 V, V_GS = 10 V, Peak
I_L = 75 A, L = 0.177 mH, R_G = 25 Ω)
Thermal Resistance
− Junction to Case
− Junction to Ambient
− Junction to Ambient (minimum foot-
print, FR−4 board)
E_AS
R_θJC
R_θJA
R_θJA
500
1.0
62.5
50
Maximum Temperature for Soldering
Purposes, 1/8″ from case for 10 s
T_L
260
Unit
Volts
Amps
Watts
W/°C
Watts
°C
mJ
°C/W
°C
http://onsemi.com
75 AMPERES
50 VOLTS
R_DS(on) = 9.5 mΩ
N−Channel
D
G
S
12
3
4
D²PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTB75N05HD
YWW
12
Gate Drain
3
Source
MTB75N05HD = Device Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB75N05HD
MTB75N05HDT4
D²PAK
D²PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 7
Publication Order Number:
MTB75N05HD/D