MTB60N05HDL Datasheet, PDF (1/11 Pages) ON Semiconductor – N−Channel Power MOSFET

MTB60N05HDL
Preferred Device
Power MOSFET
60 Amps, 50 Volts, Logic Level
N−Channel D²PAK
The D²PAK package has the capability of housing a larger die than
any existing surface mount package which allows it to be used in
applications that require the use of surface mount components with
higher power and lower R_DS(on) capabilities. This advanced high−cell
density HDTMOS power FET is designed to withstand high energy in
the avalanche and commutation modes. This new energy efficient
design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured − Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 μs)
Total Power Dissipation
Derate above 25°C
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
50
50
± 15
± 20
60
42
180
150
1.0
Operating and Storage Temperature Range T_J, T_stg − 55 to
175
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 10 Vdc, Peak
I_L = 60 Apk, L = 0.3 mH, R_G = 25 Ω)
E_AS
540
Thermal Resistance − Junction to Case
Thermal Resistance − Junction to Ambient
R_θJC
R_θJA
1.0
62.5
Maximum Lead Temperature for Soldering
T_L
260
Purposes, 1/8″ from Case for 5 seconds
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
60 AMPERES
50 VOLTS
R_DS(on) = 14 mΩ
N−Channel
D
G
S
12
3
4
D²PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
T60N05HDL
YWW
12
Gate Drain
3
Source
T60N05HDL
Y
WW
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB60N05HD
MTB60N05HDT4
D²PAK
D²PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev.3
Publication Order Number:
MTB60N05HDL/D