MTB55N06Z Datasheet, PDF (1/6 Pages) Motorola, Inc – TMOS POWER FET 55 AMPERES 60 VOLTS

MTB55N06Z
Preferred Device
Power MOSFET
55 Amps, 60 Volts
N−Channel D²PAK
This Power MOSFET is designed to withstand high energy in the
avalanche mode and switch efficiently. This high energy device also
offers a drain−to−source diode with fast recovery time. Designed for
high voltage, high speed switching applications in power supplies,
PWM motor controls and other inductive loads, the avalanche energy
capability is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated Temperature
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Low Stored Gate Charge for Efficient Switching
• Internal Source−to−Drain Diode Designed to Replace External Zener
Transient Suppressor−Absorbs High Energy in the Avalanche Mode
• ESD Protected. Designed to Typically Withstand 400 V
Machine Model and 4000 V Human Body Model.
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
V_DSS
60
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
V_DGR
60
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
V_GS
V_GSM
± 20
± 40
Drain Current
− Continuous @ T_C = 25°C
− Continuous @ T_C = 100°C
− Single Pulse (t_p ≤ 10 μs)
I_D
55
I_D
35.5
I_DM
165
Total Power Dissipation @ T_C = 25°C
Derate above 25°C
Total Power Dissipation @ T_A = 25°C
(Note 1.)
P_D
113
0.91
2.5
Operating and Storage Temperature
Range
T_J, T_stg − 55 to
150
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
Single Pulse Drain−to−Source Avalanche
E_AS
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_DS = 60 Vdc,
V_GS = 10 Vdc, Peak I_L = 55 Apk,
L = 0.3 mH, R_G = 25 Ω)
454
mJ
Thermal Resistance
− Junction to Case
− Junction to Ambient
− Junction to Ambient (Note 1.)
R_θJC
R_θJC
R_θJA
°C/W
1.1
62.5
50
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8″ from case for 10
seconds
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
http://onsemi.com
55 AMPERES
60 VOLTS
R_DS(on) = 18 mΩ
N−Channel
D
G
S
12
3
4
D²PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTB55N06Z
YWW
12
Gate Drain
3
Source
MTB55N06Z
Y
WW
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB55N06Z
MTB55N06ZT4
D²PAK
D²PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 3
Publication Order Number:
MTB55N06Z/D