MTB52N06VL Datasheet, PDF (1/10 Pages) Motorola, Inc – TMOS POWER FET 52 AMPERES 60 VOLTS

MTB52N06VL
Preferred Device
Power MOSFET
52 Amps, 60 Volts, Logic Level
N−Channel D²PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
• Avalanche Energy Specified
• I_DSS and V_DS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
Drain Current
− Continuous
− Continuous @ 100°C
− Single Pulse (t_p ≤ 10 μs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ T_A = 25°C
(Note 1.)
Operating and Storage Temperature
Range
V_DSS
V_DGR
V_GS
V_GSM
60
Vdc
60
Vdc
± 15
Vdc
± 25
Vpk
I_D
52
Adc
I_D
41
I_DM
182
Apk
P_D
188 Watts
1.25 W/°C
3.0 Watts
T_J, T_stg − 55 to
°C
175
Single Pulse Drain−to−Source Avalanche
E_AS
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 5 Vdc, Peak
I_L = 52 Apk, L = 0.3 mH, R_G = 25 Ω)
406
mJ
Thermal Resistance
− Junction to Case
− Junction to Ambient
− Junction to Ambient (Note 1.)
R_θJC
R_θJA
R_θJA
°C/W
0.8
62.5
50
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8″ from Case for 10
seconds
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
http://onsemi.com
52 AMPERES
60 VOLTS
R_DS(on) = 25 mΩ
N−Channel
D
G
S
12
3
4
D²PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTB52N06VL
YWW
12
Gate Drain
3
Source
MTB52N06VL = Device Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB52N06VL
MTB52N06VLT4
D²PAK
D²PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 5
Publication Order Number:
MTB52N06VL/D