MTB50P03HDL Datasheet, PDF (1/9 Pages) Motorola, Inc – TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS

MTB50P03HDL
Preferred Device
Power MOSFET
50 Amps, 30 Volts, Logic Level
P−Channel D²PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
http://onsemi.com
50 AMPERES
30 VOLTS
R_DS(on) = 25 mW
Features
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured − Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Pb−Free Packages are Available
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
V_DSS
30
Drain−Gate Voltage (R_GS = 1.0 MW)
V_DGR
30
Gate−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
V_GS
V_GSM
±15
± 20
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 ms)
I_D
50
I_D
31
I_DM
150
Total Power Dissipation
Derate above 25°C
P_D
125
1.0
Total Power Dissipation @ T_C = 25°C, when
2.5
mounted with the minimum recommended pad size
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W/°C
W
Operating and Storage Temperature Range
T_J, T_stg − 55 to °C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 5.0 Vdc, Peak
I_L = 50 Apk, L = 1.0 mH, R_G = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient, when mounted with the
minimum recommended pad size
E_AS
R_qJC
R_qJA
R_qJA
1250 mJ
°C/W
1.0
62.5
50
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T_L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
P−Channel
D
G
S
12
3
4
D²PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
M
TB
50P03HG
AYWW
1
Gate
2
Drain
3
Source
MTB50P03H = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
June, 2006 − Rev. 6
Publication Order Number:
MTB50P03HDL/D