MTB3N60E Datasheet, PDF (1/4 Pages) Motorola, Inc – TMOS POWER FET 3.0 AMPERES 600 VOLTS

MTB3N60E
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TMOS E−FET.™
High Energy Power FET
D²PAK for Surface Mount
N−Channel Enhancement−Mode Silicon
Gate
This advanced high voltage TMOS E−FET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain−to−source diode with fast
recovery time. Designed for high voltage, high speed switching
applications such as power supplies, PWM motor controls and other
inductive loads, the avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients.
• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal Source−to−Drain Diode Designed to Replace External Zener
Transient Suppressor — Absorbs High Energy in the Avalanche
Mode
• Source−to−Drain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
http://onsemi.com
TMOS POWER FET
3.0 AMPERES 600 VOLTS
R_DS(on) = 2.2 W
D²PAK
CASE 418B−03
STYLE 2
D
®
G
S
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 1
Publication Order Number:
MTB3N60E/D