MTB3N100E Datasheet, PDF (1/11 Pages) Motorola, Inc – TMOS POWER FET 3.0 AMPERES 1000 VOLTS

MTB3N100E
Designer’s™ Data Sheet
TMOS E−FET.™
High Energy Power FET
D²PAK for Surface Mount
N−Channel Enhancement−Mode Silicon
http://onsemi.com
Gate
TMOS POWER FET
The D²PAK package has the capability of housing a larger die than
any existing surface mount package which allows it to be used in
applications that require the use of surface mount components with
higher power and lower R_DS(on) capabilities. This high voltage
MOSFET uses an advanced termination scheme to provide enhanced
voltage−blocking capability without degrading performance over
time. In addition, this advanced TMOS E−FET is designed to
withstand high energy in the avalanche and commutation modes. The
new energy efficient design also offers a drain−to−source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
3.0 AMPERES, 1000 VOLTS
R_DS(on) = 4.0 W
CASE 418B−02, Style 2
D²PAK
D
• Robust High Voltage Termination
• Avalanche Energy Specified
®
G
• Source−to−Drain Diode Recovery Time Comparable to a
S
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured — Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13−inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 3
Publication Order Number:
MTB3N100E/D