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MTB30P06V Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 30 AMPERES 60 VOLTS
MTB30P06V
Preferred Device
Power MOSFET
30 Amps, 60 Volts
P−Channel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Pb−Free Packages are Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 10 ms)
Drain Current − Continuous @ 25°C
− Continuous @ 100°C
− Single Pulse (tp ≤ 10 ms)
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(Note 1)
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
Vdc
60
Vdc
± 15
Vdc
± 25
Vpk
30
Adc
19
105
Apk
125
W
0.83 W/°C
3.0
Operating and Storage Temperature Range TJ, Tstg −55 to °C
175
Single Pulse Drain−to−Source Avalanche
EAS
450
mJ
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 30 Apk, L = 1.0 mH, RG = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
RqJC
RqJA
RqJA
°C/W
1.2
62.5
50
Maximum Lead Temperature for Soldering
TL
Purposes, 1/8″ from Case for 10 seconds
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
© Semiconductor Components Industries, LLC, 2006
1
July, 2006 − Rev.4
http://onsemi.com
30 AMPERES, 60 VOLTS
RDS(on) = 80 mW
P−Channel
D
G
S
D2PAK
CASE 418B
STYLE 2
1
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain
MTB
30P06VG
AYWW
1
Gate
3
2 Source
Drain
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
MTB30P06V
D2PAK
50 Units/Rail
MTB30P06VG
D2PAK
(Pb−Free)
50 Units/Rail
MTB30P06VT4
D2PAK 800/Tape & Reel
MTB30P06VT4G D2PAK 800/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MTB30P06V/D