MTB15N06V Datasheet, PDF (1/11 Pages) Motorola, Inc – TMOS POWER FET 15 AMPERES

MTB15N06V
Designer’s™ Data Sheet
TMOS V™
Power Field Effect
Transistor
D²PAK for Surface Mount
N−Channel Enhancement−Mode Silicon
Gate
TMOS V is a new technology designed to achieve an on−resistance
area product about one−half that of standard MOSFETs. This new
technology more than doubles the present cell density of our 50 and 60
volt TMOS devices. Just as with our TMOS E−FET designs, TMOS V
is designed to withstand high energy in the avalanche and
commutation modes. Designed for low voltage, high speed switching
applications in power supplies, converters and power motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
New Features of TMOS V
• On−resistance Area Product about One−half that of Standard
MOSFETs with New Low Voltage, Low R_DS(on) Technology
• Faster Switching than E−FET Predecessors
Features Common to TMOS V and TMOS E−FETs
• Avalanche Energy Specified
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E−FET
• Surface Mount Package Available in 16 mm 13−inch/2500 Unit Tape
& Reel, Add T4 Suffix to Part Number
http://onsemi.com
TMOS POWER FET
15 AMPERES, 60 VOLTS
R_DS(on) = 0.12 W
D²PAK
CASE 418B−02,
Style 2
D
G
TM
S
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 3
Publication Order Number:
MTB15N06V/D