MTB1306 Datasheet, PDF (1/9 Pages) Motorola, Inc – TMOS POWER FET 75 AMPERES

MTB1306
Preferred Device
Power MOSFET
75 Amps, 30 Volts, Logic Level
N−Channel D²PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured − Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
Drain Current
− Continuous
− Continuous @ 100°C
− Single Pulse (t_p ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ T_A = 25°C
(Note 1.)
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
30
Vdc
30
Vdc
± 20
Vdc
± 20
Vpk
75
Adc
59
225
Apk
150 Watts
1.2
W/°C
2.5 Watts
Operating and Storage Temperature
Range
T_J, T_stg − 55 to
°C
150
Single Pulse Drain−to−Source Avalanche
E_AS
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 10 Vdc, Peak
I_L = 75 Apk, L = 0.1 mH, R_G = 25 Ω)
mJ
280
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1.)
R_θJC
R_θJA
R_θJA
°C/W
0.8
62.5
50
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8″ from Case for 5.0
seconds
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
http://onsemi.com
75 AMPERES
30 VOLTS
R_DS(on) = 6.5 mΩ
N−Channel
D
G
S
12
3
4
D²PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTB1306
YWW
12
Gate Drain
3
Source
MTB1306
Y
WW
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB1306
MTB1306T4
D²PAK
D²PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
September, 2004 − Rev.XXX
Publication Order Number:
MTB1306/D