MSD6100 Datasheet, PDF (1/4 Pages) Motorola, Inc – Dual Switching Diode Common Cathode

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Dual Switching Diode
Common Cathode
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by MSD6100/D
MSD6100
Anode 1 2 Anode
3 Cathode
1
2
3
CASE 29–04, STYLE 3
TO–92 (TO–226AA)
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
(Pulse Width = 10 µsec)
Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
VR
100
IF
200
IFM(surge)
500
PD(1)
TJ, Tstg(1)
625
5.0
– 55 to +135
Vdc
mAdc
mAdc
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Breakdown Voltage
(I(BR) = 100 µAdc)
V(BR)
100
—
Reverse Current
(VR = 100 Vdc)
(VR = 50 Vdc)
(VR = 50 Vdc, TA = 125°C)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
Capacitance
(VR = 0)
IR
—
5.0
—
0.1
—
50
VF
0.55
0.7
0.67
0.82
0.75
1.1
C
—
1.5
Reverse Recovery Time
(IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc)
trr
—
4.0
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25°C,
Derate above 25°C  8.0 mW/°C, TJ = –65 to +150°C, θJC = 125°C/W.
Unit
Vdc
µAdc
Vdc
pF
ns
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1997