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MSD602-RT1 Datasheet, PDF (1/4 Pages) ON Semiconductor – NPN General Purpose Amplifier Transistor Surface Mount | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN General Purpose Amplifier
Transistor Surface Mount
COLLECTOR
3
Order this document
by MSD602âRT1/D
MSD602-RT1
Motorola Preferred Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
2
BASE
Value
1
EMITTER
Unit
CollectorâBase Voltage
V(BR)CBO
60
Vdc
CollectorâEmitter Voltage
EmitterâBase Voltage
Collector Current â Continuous
V(BR)CEO
50
V(BR)EBO
7.0
IC
500
Vdc
Vdc
mAdc
Collector Current â Peak
IC(P)
1.0
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
Junction Temperature
Storage Temperature
PD
200
mW
TJ
150
°C
Tstg
â 55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
CollectorâEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
CollectorâBase Breakdown Voltage (IC = 10 µAdc, IE = 0)
EmitterâBase Breakdown Voltage (IE = 10 µAdc, IC = 0)
CollectorâBase Cutoff Current (VCB = 20 Vdc, IE = 0)
DC Current Gain(1)
(VCE = 10 Vdc, IC = 150 mAdc)
(VCE = 10 Vdc, IC = 500 mAdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
hFE1
hFE2
CollectorâEmitter Saturation Voltage (IC = 300 mAdc, IB = 30 mAdc)
VCE(sat)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
1. Pulse Test: Pulse Width ⤠300 µs, D.C. ⤠2%.
DEVICE MARKING
3
2
1
CASE 318Dâ03, STYLE 1
SCâ59
Min
Max
Unit
50
â
Vdc
60
â
Vdc
7.0
â
Vdc
â
0.1
µAdc
â
120
240
40
â
â
0.6
Vdc
â
15
pF
Marking Symbol
WRX
The âXâ represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola SmallâSignal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996
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