MSD42WT1G_13 Datasheet, PDF (1/4 Pages) ON Semiconductor – NPN High Voltage Transistors

MSD42WT1G,
NSVMSD42WT1G
NPN High Voltage
Transistors
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_(BR)CBO
300
V
V_(BR)CEO
300
V
V_(BR)EBO
6.0
V
I_C
150
mA
Rating
Symbol Max Unit
Power Dissipation (Note 1)
Thermal Resistance, Junction−to−Ambient
(Note 1)
P_D
R_qJA
450
mW
274 °C/W
Junction and Storage Temperature Range
T_J, T_stg −55 to
°C
+ 150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol Min Max Unit
Collector-Emitter Breakdown Voltage V_(BR)CEO 300
−
V
(I_C = 1.0 mA, I_B = 0)
Collector-Base Breakdown Voltage
V_(BR)CBO 300
−
V
(I_C = 100 mA, I_E = 0)
Emitter-Base Breakdown Voltage
V_(BR)EBO 6.0
−
V
(I_E = 100 mA, I_E = 0)
Collector-Base Cutoff Current
(V_CB = 200 V, I_E = 0)
I_CBO
−
0.1 mA
Emitter−Base Cutoff Current
(V_EB = 6.0 V, I_B = 0)
I_EBO
−
0.1 mA
DC Current Gain (Note 2)
(V_CE = 10 V, I_C = 1.0 mA)
(V_CE = 10 V, I_C = 30 mA)
−
h_FE1
25
−
h_FE2
40
−
Collector-Emitter Saturation Voltage
V_CE(sat)
−
0.5
V
(Note 2) (I_C = 20 mA, I_B = 2.0 mA)
1. FR-4 @ 10 mm², 1 oz. Copper traces.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC−70 (SOT−323)
CASE 419
STYLE 3
MARKING DIAGRAM
1D MG
G
1
SC−70
1D
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MSD42WT1G
SC−70 3000 / Tape & Reel
(Pb−Free)
NSVMSD42WT1G SC−70 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
June, 2013 − Rev. 11
Publication Order Number:
MSD42WT1/D