MSD42WT1G_10 Datasheet, PDF (1/4 Pages) ON Semiconductor – NPN Silicon General Purpose High Voltage Transistors

MSD42WT1G, MSD42T1G
NPN Silicon General
Purpose High Voltage
Transistors
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
and SC−59 packages which are designed for low power surface
mount applications.
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V_(BR)CBO
Collector-Emitter Voltage
V_(BR)CEO
Emitter-Base Voltage
V_(BR)EBO
Collector Current − Continuous
I_C
THERMAL CHARACTERISTICS
300
Vdc
300
Vdc
6.0
Vdc
150
mAdc
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
P_D
150
mW
Junction Temperature
T_J
150
°C
Storage Temperature Range
T_stg
−55X+ 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol Min Max Unit
Collector-Emitter Breakdown Voltage V_(BR)CEO 300
−
Vdc
(I_C = 1.0 mAdc, I_B = 0)
Collector-Base Breakdown Voltage
V_(BR)CBO 300
−
Vdc
(I_C = 100 mAdc, I_E = 0)
Emitter-Base Breakdown Voltage
(I_E = 100 mAdc, I_E = 0)
V_(BR)EBO 6.0
− Vdc
Collector-Base Cutoff Current
(V_CB = 200 Vdc, I_E = 0)
I_CBO
−
0.1 mA
Emitter−Base Cutoff Current
(V_EB = 6.0 Vdc, I_B = 0)
I_EBO
−
0.1 mA
DC Current Gain (Note 2)
(V_CE = 10 Vdc, I_C = 1.0 mAdc)
(V_CE = 10 Vdc, I_C = 30 mAdc)
−
h_FE1
25
−
h_FE2
40
−
Collector-Emitter Saturation Voltage
V_CE(sat)
−
(Note 2) (I_C = 20 mAdc,
I_B = 2.0 mAdc)
0.5 Vdc
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC−70 (SOT−323)
CASE 419
STYLE 3
3
2
1
SC−59
CASE 318D
MARKING DIAGRAMS
1D MG
G
J1D MG
G
1
1
XXX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MSD42WT1G
Package
SC−70
(Pb−Free)
Shipping^†
3000 / Tape & Reel
MSD42T1G
SC−59 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
May, 2010 − Rev. 7
Publication Order Number:
MSD42WT1/D