MSD42T1G_13 Datasheet, PDF (1/4 Pages) ON Semiconductor – NPN Silicon General Purpose High Voltage Transistors

MSD42T1G
NPN Silicon General
Purpose High Voltage
Transistors
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC−59 package
which is designed for low power surface mount applications.
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V_(BR)CBO
300
Vdc
Collector-Emitter Voltage
V_(BR)CEO
300
Vdc
Emitter-Base Voltage
V_(BR)EBO
6.0
Vdc
Collector Current − Continuous
I_C
150
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
Thermal Resistance, Junction−to−
Ambient
P_D
R_qJA
450
mW
274
°C/W
Junction and Storage Temperature
Range
T_J, T_stg −55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol Min Max Unit
Collector-Emitter Breakdown Voltage V_(BR)CEO 300
−
Vdc
(I_C = 1.0 mAdc, I_B = 0)
Collector-Base Breakdown Voltage
V_(BR)CBO 300
−
Vdc
(I_C = 100 mAdc, I_E = 0)
Emitter-Base Breakdown Voltage
(I_E = 100 mAdc, I_E = 0)
V_(BR)EBO 6.0
− Vdc
Collector-Base Cutoff Current
(V_CB = 200 Vdc, I_E = 0)
I_CBO
−
0.1 mA
Emitter−Base Cutoff Current
(V_EB = 6.0 Vdc, I_B = 0)
I_EBO
−
0.1 mA
DC Current Gain (Note 2)
(V_CE = 10 Vdc, I_C = 1.0 mAdc)
(V_CE = 10 Vdc, I_C = 30 mAdc)
−
h_FE1
25
−
h_FE2
40
−
Collector-Emitter Saturation Voltage
V_CE(sat)
−
(Note 2) (I_C = 20 mAdc,
I_B = 2.0 mAdc)
1. FR-4 @ 10 mm², 1 oz. Copper traces.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
0.5 Vdc
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC−59
CASE 318D
STYLE 1
MARKING DIAGRAM
J1D MG
G
1
SC−59
J1D = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MSD42T1G
SC−59 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
April, 2013 − Rev. 0
Publication Order Number:
MSD42T1/D