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| MSD42SWT1G_10 Datasheet, PDF (1/2 Pages) ON Semiconductor – NPN Silicon General Purpose High Voltage Transistor | |||
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MSD42SWT1G
NPN Silicon General
Purpose High Voltage
Transistor
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
ï· These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS (TA = 25ï°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
300
Vdc
Collector-Emitter Voltage
V(BR)CEO
300
Vdc
Emitter-Base Voltage
V(BR)EBO
6.0
Vdc
Collector Current -- Continuous
IC
150
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
PD
150
mW
Junction Temperature
TJ
150
ï°C
Storage Temperature Range
Tstg
-- 55 to +150 ï°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol Min Max Unit
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO 300
--
Vdc
Collector-Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO 300
--
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 mAdc, IE = 0)
Collector-Base Cutoff Current
(VCB = 300 Vdc, IE = 0)
Emitter--Base Cutoff Current
(VEB = 6.0 Vdc, IB = 0)
V(BR)EBO 6.0
--
Vdc
ICBO
-- 0.1 mA
IEBO
-- 0.1 mA
DC Current Gain (Note 2)
(VCE = 10 Vdc, IC = 1.0 mAdc)
(VCE = 10 Vdc, IC = 30 mAdc)
hFE1
hFE2
--
25 200
40 --
Collector-Emitter Saturation Voltage
(Note 2) (IC = 200 mAdc,
IB = 2.0 mAdc)
VCE(sat)
--
0.5 Vdc
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
2. Pulse Test: Pulse Width ï£ 300 ms, D.C. ï£ 2%.
1
BASE
2
EMITTER
3
1
2
SC- 70 (SOT- 323)
CASE 419
STYLE 3
MARKING DIAGRAM
D4 M G
G
1
D4 = Device Code
M = Date Code*
G = Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shippingâ
MSD42SWT1G SC--70/SOT--323 3000/Tape & Reel
(Pb--Free)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ï£ Semiconductor Components Industries, LLC, 2010
1
October, 2010 - Rev. 2
Publication Order Number:
MSD42SWT1/D
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