MSD2714AT1_06 Datasheet, PDF (1/4 Pages) ON Semiconductor – VHF/UHF Transistor

MSD2714AT1
Preferred Device
VHF/UHF Transistor
NPN Silicon
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
THERMAL CHARACTERISTICS
V_CEO
25
Vdc
V_CBO
30
Vdc
V_EBO
3.0
Vdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
T_A = 25°C
Derate above 25°C
P_D
(Note 1)
225
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
556
°C/W
Total Device Dissipation Alumina
Substrate, T_A = 25°C
Derate above 25°C
P_D
(Note 2)
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
625
°C/W
Junction and Storage Temperature Range T_J, T_stg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 X 0.75 X 0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
3
2
1
SC−59
CASE 318D
STYLE 1
MARKING DIAGRAM
14A M G
G
1
14A = Specific Device Code
M = Date Code*
G =Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
ORDERING INFORMATION
Device
Package
Shipping^†
MSD2714AT1
SC−59 3000 / Tape & Reel
MSD2714AT1G SC−59 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MSD2714AT1/D