MSD2714AT1 Datasheet, PDF (1/8 Pages) ON Semiconductor – VHF/UHF Transistor

MSD2714AT1
Preferred Device
VHF/UHF Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
V_CEO
25
Vdc
Collector-Base Voltage
V_CBO
30
Vdc
Emitter-Base Voltage
V_EBO
3.0
Vdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board
P_D
225
mW
T_A = 25°C
(Note 1)
Derate above 25°C
1.8
mW/°C
Thermal Resistance,
Junction to Ambient
R_qJA
556
°C/W
Total Device Dissipation
Alumina Substrate, T_A = 25°C
Derate above 25°C
P_D
300
mW
(Note 2)
2.4
mW/°C
Thermal Resistance,
Junction–to–Ambient
R_qJA
625
°C/W
Junction and Storage
Temperature Range
T_J, T_stg –55 to +150
°C
1. FR–5 = 1.0 X 0.75 X 0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
3
2
1
CASE 318D
SC–59
STYLE 1
MARKING DIAGRAM
14A M
14A= Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
MSD2714AT1
SC–59
TBD
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2002
1
May, 2002 – Rev. 1
Publication Order Number:
MSD2714AT1/D