MSD1328-RT1 Datasheet, PDF (1/4 Pages) ON Semiconductor – NPN Low Voltage Output Amplifier Surface Mount

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN Low Voltage Output
Amplifier Surface Mount
COLLECTOR
3
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by MSD1328–RT1/D
MSD1328-RT1
Motorola Preferred Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
2
BASE
Value
1
EMITTER
Unit
Collector–Base Voltage
V(BR)CBO
25
Vdc
Collector–Emitter Voltage
V(BR)CEO
20
Vdc
Emitter–Base Voltage
V(BR)EBO
12
Vdc
Collector Current — Continuous
IC
500
mAdc
Collector Current — Peak
IC(P)
1000
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
– 55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = 10 µAdc, IE = 0)
V(BR)CBO
Emitter–Base Breakdown Voltage
(IE = 10 µAdc, IE = 0)
V(BR)EBO
Collector–Base Cutoff Current
(VCB = 25 Vdc, IE = 0)
DC Current Gain(1)
(VCE = 2.0 Vdc, IC = 500 mAdc)
ICBO
hFE
Collector–Emitter Saturation Voltage (IC = 500 mAdc, IB = 20 mAdc)
VCE(sat)
Base–Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
VBE(sat)
DEVICE MARKING
3
2
1
CASE 318D–03, STYLE 1
SC–59
Min
Max
Unit
20
—
Vdc
25
—
Vdc
12
—
Vdc
—
0.1
µAdc
200
350
—
—
0.4
Vdc
—
1.2
Vdc
Marking Symbol
1DR^X
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996