MSC3930-BT1 Datasheet, PDF (1/2 Pages) ON Semiconductor – NPN RF Amplifier Transistor

MSC3930−BT1
Preferred Device
NPN RF Amplifier Transistor
• Pb−Free Package is Available
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Unit
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_C
30
Vdc
20
Vdc
5.0
Vdc
30
mAdc
Characteristic
Symbol
Max
Unit
Power Dissipation
P_D
200
mW
Junction Temperature
T_J
150
°C
Storage Temperature
T_stg
−55 ~ +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS (T_A = 25°C)
Characteristic
Symbol Min
Collector−Base Cutoff Current
(V_CB = 10 Vdc, I_E = 0)
I_CBO
—
DC Current Gain⁽¹⁾
h_FE
(V_CB = 10 Vdc, I_C = −1.0 mAdc)
70
Collector−Gain — Bandwidth
Product
f_T
150
(V_CB = 10 Vdc, I_E = −1.0 mAdc)
Reverse Transistor Capacitance
C_re
—
(V_CE = 10 Vdc, I_C = 1.0 mAdc, f =
10.7 MHz)
1. Pulse Test: Pulse Width ≤ 300 μs, D.C. ≤ 2%.
Max Unit
0.1 μAdc
—
140
— MHz
1.5
pF
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
3
MARKING
DIAGRAM
1
2
SOT−323/SC−70
CASE 419
STYLE 3
VB MG
G
1
VB = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MSC3930−BT1
SC−70 3000/Tape & Reel
MSC3930−BT1G SC−70 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
October, 2005 − Rev. 3
Publication Order Number:
MSC3930−BT1/D