MSC3130T1 Datasheet, PDF (1/4 Pages) Motorola, Inc – NPN RF Amplifier Transistors Surface Mount

MSC3130T1
Preferred Device
NPN RF Amplifier Transistor
Surface Mount
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CBO
V_CEO
V_EBO
I_C
Characteristic
Symbol
Power Dissipation
P_D
Junction Temperature
T_J
Storage Temperature
T_stg
Value
15
10
3.0
50
Max
200
150
−55 ~ +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C)
Characteristic
Symbol Min Max
Collector Cutoff Current
(V_CB = 10 Vdc, I_E = 0)
I_CBO
— 1.0
Collector−Emitter Breakdown Voltage
(I_C = 2.0 mAdc, I_B = 0)
V_CEO
10
−
Emitter−Base Breakdown Voltage
(I_E = 10 mAdc, I_C = 0)
V_EBO
3.0
−
DC Current Gain (Note 1)
(V_CE = 4.0 Vdc, I_C = 5.0 mAdc)
h_FE
75 400
Collector−Emitter Saturation Voltage
(I_C = 20 mAdc, I_B = 4.0 mAdc)
V_CE(sat)
−
0.5
Current−Gain − Bandwidth Product
f_T
(V_CB = 4.0 Vdc, I_E = −5.0 mAdc)
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. v 2%.
1.4 2.5
Unit
mAdc
Vdc
Vdc
−
Vdc
GHz
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
3
2
1
SC−59
SUFFIX
CASE 318D
MARKING DIAGRAM
1S M
1S = Specific Device Code
M = Date Code
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 4
Publication Order Number:
MSC3130T1/D