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| MSC2712GT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – General Purpose Amplifier Transistor | |||
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MSC2712GT1G,
MSC2712YT1G
General Purpose
Amplifier Transistor
NPN Surface Mount
Features
⢠Moisture Sensitivity Level: 1
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
SCâ59
CASE 318D
STYLE 1
MARKING DIAGRAMS
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
CollectorâBase Voltage
V(BR)CBO
60
Vdc
CollectorâEmitter Voltage
V(BR)CEO
50
Vdc
EmitterâBase Voltage
V(BR)EBO
7.0
Vdc
Collector Current â Continuous
IC
100
mAdc
Collector Current â Peak
IC(P)
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
â55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
12G MG
G
12Y MG
G
12M, 12Y = Specific Device Code
M
= Date Code
G
= PbâFree Package
(Note: Microdot may be in either location)
COLLECTOR
3
1
BASE
2
EMITTER
ORDERING INFORMATION
Device
Package
Shippingâ
MSC2712GT1G SCâ59 3000 / Tape & Reel
(PbâFree)
MSC2712YT1G SCâ59 3000 / Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
February, 2015 â Rev. 7
Publication Order Number:
MSC2712GT1/D
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