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| MSC2712GT1 Datasheet, PDF (1/4 Pages) ON Semiconductor – General Purpose Amplifier Transistor | |||
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MSC2712GT1, MSC2712YT1
General Purpose
Amplifier Transistor
NPN Surface Mount
⢠Moisture Sensitivity Level: 1
⢠ESD Rating: TBD
MAXIMUM RATINGS (TA = 25°C)
Rating
CollectorâBase Voltage
CollectorâEmitter Voltage
EmitterâBase Voltage
Collector Current â Continuous
Collector Current â Peak
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
Symbol
PD
TJ
Tstg
Value
60
50
7.0
100
200
Max
200
150
â55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
CollectorâEmitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
CollectorâBase Breakdown Voltage
(IC = 10 mAdc, IE = 0)
EmitterâBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
CollectorâBase Cutoff Current
(VCB = 45 Vdc, IE = 0)
CollectorâEmitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
MSC2712GT1
MSC2712YT1
V(BR)CEO 50
â
Vdc
V(BR)CBO 60
â
Vdc
V(BR)EBO 7.0
â
Vdc
ICBO
â 0.1 mAdc
ICEO
hFE
â 0.1 mAdc
â 2.0 mAdc
â 1.0 mAdc
â
200 400
120 240
CollectorâEmitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat) â 0.5 Vdc
Current âGain â Bandwidth Product
fT
MHz
(IC = 1 mA, VCE = 10.0 V, f = 10 MHz)
50 â
1. Pulse Test: Pulse Width ⤠300 ms, D.C. ⤠2%.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
3
2
1
SCâ59
CASE 318D
STYLE 1
MARKING DIAGRAMS
12G M
12Y M
12G, 12 Y = Specific Device Code
M
= Date Code
ORDERING INFORMATION
Device {
Package
Shipping
MSC2712GT1
SCâ59
3000/Tape & Reel
MSC2712YT1
SCâ59
3000/Tape & Reel
â The âT1â suffix refers to a 7 inch reel.
© Semiconductor Components Industries, LLC, 2003
1
August, 2003 â Rev. 4
Publication Order Number:
MSC2712GT1/D
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