MSB92ASWT1G Datasheet, PDF (1/3 Pages) ON Semiconductor – PNP Silicon General Purpose High Voltage Transistor

MSB92ASWT1G,
MSB92AS1WT1G
PNP Silicon General
Purpose High Voltage
Transistor
This PNP Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Collector-Base Voltage
V_(BR)CBO
Collector-Emitter Voltage
V_(BR)CEO
Emitter-Base Voltage
V_(BR)EBO
Collector Current − Continuous
I_C
Electrostatic Discharge
ESD
Value
−300
−300
−5.0
500
HBMu16,000,
MMu2,000
Unit
Vdc
Vdc
Vdc
mAdc
V
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
P_D
150
mW
Junction Temperature
T_J
150
°C
Storage Temperature Range
T_stg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC−70 (SOT−323)
CASE 419
STYLE 3
MARKING DIAGRAM
D3 M G
G
D5 M G
G
1
MSB92ASWT1G
1
MSB92AS1WT1G
Dx = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MSB92ASWT1G SC−70 ^{3000/Tape & Reel}
(Pb−Free)
MSB92AS1WT1G SC−70 ^{3000/Tape & Reel}
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
September, 2010 − Rev. 3
Publication Order Number:
MSB92ASWT1/D