MSB710-RT1 Datasheet, PDF (1/6 Pages) ON Semiconductor – PNP General Purpose Amplifier Transistor Surface Mount

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
PNP General Purpose Amplifier
Transistor Surface Mount
COLLECTOR
3
Order this document
by MSB710–RT1/D
MSB710-RT1
Motorola Preferred Device
2
BASE
1
EMITTER
3
2
1
CASE 318D–04, STYLE 1
SC–59
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
DEVICE MARKING
CR^X
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
Symbol
PD
TJ
Tstg
Value
– 60
– 50
– 7.0
– 500
–1.0
Max
200
150
– 55 ~ +150
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
replaces MSB710–QT1/D
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
Unit
Vdc
Vdc
Vdc
mAdc
Adc
Unit
mW
°C
°C
1