MSB709-RT1G Datasheet, PDF (1/4 Pages) ON Semiconductor – PNP General Purpose Amplifier Transistor Surface Mount

MSB709−RT1
Preferred Device
PNP General Purpose
Amplifier Transistor
Surface Mount
Features
• Pb−Free Package is Available
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Unit
Collector − Base Voltage
Collector − Emitter Voltage
Emitter − Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_C
I_C(P)
− 60
− 45
− 7.0
−100
− 200
Vdc
Vdc
Vdc
mAdc
mAdc
Characteristic
Symbol
Max
Unit
Power Dissipation
P_D
200
mW
Junction Temperature
T_J
150
°C
Storage Temperature
T_stg
−55 ~ +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
2
BASE
1
EMITTER
MARKING
DIAGRAM
3
2
1
SC−59
CASE 318D
AR M G
G
AR
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
June, 2005 − Rev. 6
Publication Order Number:
MSB709−RT1/D