MSB709-RT1 Datasheet, PDF (1/4 Pages) ON Semiconductor – PNP General Purpose Amplifier Transistor Surface Mount

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MSB709–RT1/D
PNP General Purpose Amplifier
Transistor Surface Mount
COLLECTOR
3
MSB709-RT1
Motorola Preferred Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Collector–Base Voltage
V(BR)CBO
Collector–Emitter Voltage
V(BR)CEO
Emitter–Base Voltage
V(BR)EBO
Collector Current — Continuous
IC
Collector Current — Peak
IC(P)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Collector–Emitter Breakdown Voltage (IC = – 2.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = –10 µAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = –10 µAdc, IE = 0)
Collector–Base Cutoff Current (VCB = –45 Vdc, IE = 0)
Collector–Emitter Cutoff Current (VCE = –10 Vdc, IB = 0)
DC Current Gain(1)
(VCE = –10 Vdc, IC = – 2.0 mAdc)
Collector–Emitter Saturation Voltage
(IC = –100 mAdc, IB = –10 mAdc)
1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
2
BASE
Value
– 60
– 45
– 7.0
–100
– 200
1
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Max
Unit
200
mW
150
°C
– 55 ~ +150
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
hFE1
VCE(sat)
DEVICE MARKING
3
2
1
CASE 318D–03, STYLE 1
SC–59
Min
– 45
– 60
– 7.0
—
—
210
—
Max
—
—
—
– 0.1
–100
340
– 0.5
Unit
Vdc
Vdc
Vdc
µAdc
nAdc
—
Vdc
Marking Symbol
AR^X
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996