MSB1218A-RT1G Datasheet, PDF(1/4 Page) ON Semiconductor – PNP Silicon General Purpose Amplifier Transistor

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MSB1218A-RT1G Datasheet, PDF (1/4 Pages) ON Semiconductor – PNP Silicon General Purpose Amplifier Transistor

MSB1218A- RT1G

PNP Silicon General

Purpose Amplifier

Transistor

This PNP Silicon Epitaxial Planar Transistor is designed for general

purpose amplifier applications. This device is housed in the

SC--70/SOT--323 package which is designed for low power surface

mount applications.

Features

ï· High hFE, 210 -- 460

ï· Low VCE(sat), < 0.5 V

ï· These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25ï°C)

Rating

Collector--Base Voltage

Collector--Emitter Voltage

Emitter--Base Voltage

Collector Current -- Continuous

Collector Current -- Peak

THERMAL CHARACTERISTICS

Rating

Power Dissipation (Note 1)

Junction Temperature

Storage Temperature Range

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

IC(P)

Value

7.0

100

200

Unit

Vdc

mAdc

Symbol

Tstg

Max

150

-- 55 to +150

Unit

ï°C

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol Min Max Unit

Collector--Emitter Breakdown Voltage

(IC = 2.0 mAdc, IB = 0)

V(BR)CEO 45

Vdc

Collector--Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO 45

Vdc

Emitter--Base Breakdown Voltage

(IE = 10 mAdc, IE = 0)

V(BR)EBO 7.0

Vdc

Collector--Base Cutoff Current

(VCB = 20 Vdc, IE = 0)

ICBO

-- 0.1 mA

Collector--Emitter Cutoff Current

(VCE = 10 Vdc, IB = 0)

ICEO

-- 100 mA

DC Current Gain (Note 2)

(VCE = 10 Vdc, IC = 2.0 mAdc)

hFE1

210 340

Collector--Emitter Saturation Voltage

VCE(sat)

0.5 Vdc

(Note 2) (IC = 100 mAdc, IB = 10 mAdc)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a FR--4 glass epoxy printed circuit board using the

minimum recommended footprint.

2. Pulse Test: Pulse Width ï£ 300 ms, D.C. ï£ 2%.

ï£ Semiconductor Components Industries, LLC, 2010

October, 2010 -- Rev. 7

http://onsemi.com

COLLECTOR

BASE

EMITTER

SC--70 (SOT--323)

CASE 419

STYLE 4

MARKING DIAGRAM

BR M G

BR = Device Code

M = Date Code*

G = Pb--Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

Device

Package

Shippingâ

MSB1218A--RT1G SC--70 3000 /Tape & Reel

(Pb--Free)

â For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

MSB1218A--RT1/D

▷