MSB1218A-RT1 Datasheet, PDF (1/6 Pages) ON Semiconductor – PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MSB1218A–RT1/D
PNP Silicon General Purpose
Amplifier Transistor
This PNP Silicon Epitaxial Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC–70/SOT–323 package
which is designed for low power surface mount applications.
• High hFE, 210 – 460
• Low VCE(sat), < 0.5 V
• Available in 8 mm, 7–inch/3000 Unit Tape and Reel
MSB1218A-RT1
Motorola Preferred Devices
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak
DEVICE MARKING
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
Value
45
45
7.0
100
200
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
1
2
CASE 419–02, STYLE 3
SC–70/SOT–323
COLLECTOR
3
MSB1218A–RT1 = BR
THERMAL CHARACTERISTICS
Rating
Power Dissipation(1)
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Symbol
Max
Unit
PD
150
mW
TJ
150
°C
Tstg
– 55 ~ + 150
°C
1
BASE
2
EMITTER
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
V(BR)CEO
45
—
Vdc
Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0)
V(BR)CBO
45
—
Vdc
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IE = 0)
V(BR)EBO
7.0
—
Vdc
Collector–Base Cutoff Current (VCB = 20 Vdc, IE = 0)
ICBO
—
0.1
µA
Collector–Emitter Cutoff Current (VCE = 10 Vdc, IB = 0)
DC Current Gain(2) (VCE = 10 Vdc, IC = 2.0 mAdc)
Collector–Emitter Saturation Voltage(2) (IC = 100 mAdc, IB = 10 mAdc)
ICEO
—
100
µA
hFE1
210
340
—
VCE(sat)
—
0.5
Vdc
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
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