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| MSA1162GT1 Datasheet, PDF (1/4 Pages) ON Semiconductor – General Purpose Amplifier Transistors | |||
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MSA1162GT1, MSA1162YT1
General Purpose
Amplifier Transistors
PNP Surface Mount
⢠Moisture Sensitivity Level: 1
⢠ESD Rating: TBD
MAXIMUM RATINGS (TA = 25°C)
Rating
CollectorâBase Voltage
CollectorâEmitter Voltage
EmitterâBase Voltage
Collector Current â Continuous
Collector Current â Peak
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
Value
60
50
7.0
100
200
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Symbol
PD
TJ
Tstg
Max
200
150
â55 to
+150
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise
noted)
Characteristic
Symbol Min Max Unit
CollectorâEmitter Breakdown Voltage (IC V(BR)CEO 50 â Vdc
= 2.0 mAdc, IB = 0)
CollectorâBase Breakdown Voltage (IC = V(BR)CBO 60 â Vdc
10 mAdc, IE = 0)
EmitterâBase Breakdown Voltage (IE = V(BR)EBO 7.0 â Vdc
10 mAdc, IC = 0)
CollectorâBase Cutoff Current (VCB = 45
Vdc, IE = 0)
ICBO
â 0.1 mAdc
CollectorâEmitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
ICEO
â 0.1 mAdc
â 2.0 mAdc
â 1.0 mAdc
DC Current Gain (Note 1)
hFE
â
(VCE = 6.0 Vdc, IC = 2.0 mAdc) MSA1162
120 240
YT1
200 400
MSA1162GT1
CollectorâEmitter Saturation Voltage (IC VCE(sat) â 0.5 Vdc
= 100 mAdc, IB = 10 mAdc)
Current âGain â Bandwidth Product
fT
(IC = 1 mA, VCE = 10.0 V, f = 10 MHz)
MHz
80 â
1. Pulse Test: Pulse Width ⤠300 ms, D.C. ⤠2%.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
3
2
1
SCâ59
CASE 318D
STYLE 1
MARKING DIAGRAM
62x M
62 = Specific Device Code
x = G or Y
M = Date Code
ORDERING INFORMATION
Device {
Package
Shipping
MSA1162GT1
SCâ59
3000/Tape & Reel
MSA1162YT1
SCâ59
3000/Tape & Reel
â The âT1â suffix refers to a 7 inch reel.
© Semiconductor Components Industries, LLC, 2003
1
September, 2003 â Rev. 4
Publication Order Number:
MSA1162GT1/D
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