|
MPSW51_10 Datasheet, PDF (1/5 Pages) ON Semiconductor – One Watt High Current Transistors | |||
|
MPSW51, MPSW51A
One Watt High Current
Transistors
PNP Silicon
Features
⢠PbâFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector âEmitter Voltage
VCEO
Vdc
MPSW51
â30
MPSW51A
â40
Collector âBase Voltage
VCBO
Vdc
MPSW51
â40
MPSW51A
â50
Emitter âBase Voltage
Collector Current â Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
â5.0
â1000
1.0
8.0
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
2.5
W
Derate above 25°C
20
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg â55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctionâtoâAmbient RqJA
125
°C/W
Thermal Resistance, JunctionâtoâCase
RqJC
50
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
123
STRAIGHT LEAD
BULK PACK
TOâ92 1 WATT
(TOâ226)
1
2
3
CASE 29â10
STYLE 1
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPS
W51x
AYWW G
G
*For additional information on our PbâFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
August, 2010 â Rev. 4
x = 51A Devices
A = Assembly Location
Y = Year
WW = Work Week
G = PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MPSW51/D
|
▷ |