MPSW51 Datasheet, PDF (1/4 Pages) Motorola, Inc – ne Watt High Current Transistors

ON Semiconductort
One Watt High Current
Transistors
PNP Silicon
w These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MPSW51
MPSW51A*
*ON Semiconductor Preferred Device
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage MPSW51
MPSW51A
Collector −Base Voltage
MPSW51
MPSW51A
Emitter −Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T_A = 25°C
Derate above 25°C
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_J, T_stg
−30
−40
−40
−50
−5.0
−1000
1.0
8.0
2.5
20
−55 to +150
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
Watts
mW/°C
°C
1
23
CASE 29−10, STYLE 1
TO−92 (TO−226AE)
COLLECTOR
3
2
BASE
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
1
EMITTER
Thermal Resistance, Junction to Ambient
R_qJA
125
°C/W
Thermal Resistance, Junction to Case
R_qJC
50
°C/W
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage⁽¹⁾
(I_C = −1.0 mAdc, I_B = 0)
V_(BR)CEO
Vdc
MPSW51
−30
—
MPSW51A
−40
—
Collector −Base Breakdown Voltage
(I_C = −100 mAdc, I_E = 0)
V_(BR)CBO
Vdc
MPSW51
−40
—
MPSW51A
−50
—
Emitter −Base Breakdown Voltage
(I_E = −100 mAdc, I_C = 0)
Collector Cutoff Current
(V_CB = −30 Vdc, I_E = 0)
(V_CB = −40 Vdc, I_E = 0)
Emitter Cutoff Current
(V_EB = −3.0 Vdc, I_C = 0)
MPSW51
MPSW51A
V_(BR)EBO
I_CBO
I_EBO
−5.0
—
—
—
—
−0.1
−0.1
−0.1
Vdc
μAdc
μAdc
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 3
Publication Order Number:
MPSW51/D