MPSW05 Datasheet, PDF (1/4 Pages) Motorola, Inc – One Watt Amplifier Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSW05/D
One Watt Amplifier Transistors
NPN Silicon
COLLECTOR
3
MPSW05
MPSW06*
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol MPSW05 MPSW06 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
60
80
60
80
4.0
500
1.0
8.0
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
2.5
Watts
20
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient R_qJA
125
Thermal Resistance, Junction to Case
R_qJC
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
MPSW05
MPSW06
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MPSW05
MPSW06
MPSW05
MPSW06
Symbol
V(BR)CEO
V(BR)EBO
ICES
ICBO
IEBO
1
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Min
Max
Unit
Vdc
60
—
80
—
4.0
—
Vdc
µAdc
—
0.5
—
0.5
µAdc
—
0.1
—
0.1
—
0.1
µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996