MPSA75 Datasheet, PDF (1/4 Pages) Motorola, Inc – Darlington Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Transistors
PNP Silicon
COLLECTOR 3
BASE
2
Order this document
by MPSA75/D
MPSA75
MPSA77
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol MPSA75 MPSA77 Unit
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCES
VEBO
IC
PD
–40
–60
–10
–500
625
5.0
Vdc
Vdc
Adc
mW
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient R_qJA
200
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –100 µAdc, VBE = 0)
MPSA75
MPSA77
V(BR)CES
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPSA75
MPSA77
V(BR)CBO
Collector Cutoff Current
(VCB= –30 V, IE = 0)
(VCB = –50 V, IE = 0)
Collector Cutoff Current
(VCE = –30 V, VBE = 0)
(VCE = –50 V, VBE = 0)
Emitter Cutoff Current (VEB = –10 Vdc)
ON CHARACTERISTICS
MPSA75
MPSA77
MPSA75
MPSA77
ICBO
ICES
IEBO
DC Current Gain
(IC = –10 mA, VCE = –5.0 V)
(IC = –100 mA, VCE = –5.0 V)
Collector – Emitter Saturation Voltage (IC = –100 mA, IB = –0.1 mAdc)
Base – Emitter On Voltage (IC = –100 mA, VCE = –5.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE
Current – Gain — High Frequency (IC = –10 mA, VCE = –5.0 V, f = 100 MHz)
|hfe|
1
23
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min
Typ
Max
Unit
–40
—
–60
—
—
Vdc
—
–40
—
–60
—
—
Vdc
—
nAdc
—
—
–100
—
—
–100
nAdc
—
—
–500
—
—
–500
—
—
–100
nAdc
10,000
—
10,000
—
—
—
—
—
—
—
—
–1.5
Vdc
–2.0
Vdc
1.25
2.4
—
—
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1