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MPS6726 Datasheet, PDF (1/4 Pages) Motorola, Inc – One Watt Amplifier Transistor | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS6726/D
One Watt Amplifier Transistor
PNP Silicon
COLLECTOR
3
2
BASE
MPS6726
MPS6727
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector â Emitter Voltage
VCEO
Vdc
MPS6726
â30
MPS6727
â40
Collector â Base Voltage
VCBO
Vdc
MPS6726
â40
MPS6727
â50
Emitter â Base Voltage
Collector Current â Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
â5.0
Vdc
â1.0
Adc
1.0
Watts
8.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
2.5
Watts
20
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
â 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
Thermal Resistance, Junction to Case
RqJC
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector â Emitter Breakdown Voltage
(IC = â10 mAdc, IB = 0)
MPS6726
MPS6727
Collector â Base Breakdown Voltage
(IC = â100 mAdc, IE = 0)
MPS6726
MPS6727
Emitter â Base Breakdown Voltage
(IE = â100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = â40 Vdc, IE = 0)
(VCB = â50 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = â5.0 Vdc, IC = 0)
MPS6726
MPS6727
1
2
3
CASE 29â05, STYLE 1
TOâ92 (TOâ226AE)
Symbol
Min
Max
Unit
V(BR)CEO
Vdc
â30
â
â40
â
V(BR)CBO
Vdc
â40
â
â50
â
V(BR)EBO â5.0
â
Vdc
ICBO
µAdc
â
â0.1
â
â0.1
IEBO
â
â0.1
µAdc
©MMotootorroollaa,
SmallâSignal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
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