MPS6724 Datasheet, PDF (1/5 Pages) Motorola, Inc – One Watt Darlington Transistors

MPS6724, MPS6725
One Watt Darlington
Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
V_CEO
Vdc
MPS6724
40
MPS6725
50
Collector −Base Voltage
V_CBO
Vdc
MPS6724
50
MPS6725
60
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T_A = 25°C
Derate above 25°C
V_EBO
I_C
P_D
12
1000
1.0
8.0
Vdc
mAdc
W
mW/°C
Total Device Dissipation @ T_C = 25°C
P_D
Derate above 25°C
2.5
W
20
mW/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient R_qJA
125
°C/W
Thermal Resistance, Junction−to−Case
R_qJC
50
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
COLLECTOR 3
BASE
2
EMITTER 1
TO−92 (TO−226)
CASE 29−10
1
STYLE 1
23
MARKING DIAGRAM
MPS
672x
AYWW G
G
MPS672x = Device Code
x = 4 or 5
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 3
Publication Order Number:
MPS6724/D