MPS650_07 Datasheet, PDF (1/5 Pages) ON Semiconductor – Amplifier Transistors

NPN − MPS650, MPS651;
PNP − MPS750, MPS751
MPS651 and MPS751 are Preferred Devices
Amplifier Transistors
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
V_CE
Vdc
MPS650; MPS750
40
MPS651; MPS751
60
Collector −Base Voltage
V_CB
Vdc
MPS650; MPS750
60
MPS651; MPS751
80
Emitter −Base Voltage
Collector Current − Continuous
Total Power Dissipation @ T_A = 25°C
Derate above 25°C
V_EB
5.0
Vdc
I_C
2.0
Adc
P_D
625
mW
5.0
mW/°C
Total Power Dissipation @ T_C = 25°C
P_D
1.5
W
Derate above 25°C
12
mW/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient V_CE
200
°C/W
Thermal Resistance, Junction−to−Case
V_CB
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
NPN
1
EMITTER
COLLECTOR
3
2
BASE
PNP
1
EMITTER
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPS
xxx
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
1
April, 2007 − Rev. 3
xxx = 650, 750, 651, or 751
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MPS650/D