MPS6507 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistor

MPS6507
Amplifier Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T_A = 25°C
Derate above 25°C
V_CEO
V_CBO
V_EBO
I_C
P_D
20
Vdc
30
Vdc
3.0
Vdc
50
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ T_C = 25°C
P_D
Derate above 25°C
1.5
W
12
mW/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg − 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Symbol
R_qJA(1)
Max
200
Unit
°C/W
Thermal Resistance, Junction−to−Case R_qJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage ⁽²⁾
(I_C = 1.0 mAdc, I_B = 0)
Collector −Base Breakdown Voltage
(I_C = 100 mAdc, I_E = 0)
Emitter −Base Breakdown Voltage
(I_E = 100 mAdc, I_C = 0)
Collector Cutoff Current
(V_CB = 15 Vdc, I_E = 0)
(V_CB = 15 Vdc, I_E = 0, T_A = 60°C)
ON CHARACTERISTICS
DC Current Gain⁽²⁾
(I_C = 2.0 mAdc, V_CE = 10 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I_C = 10 mAdc, V_CE = 10 Vdc, f = 100 MHz)
Output Capacitance
(V_CB = 10 Vdc, I_E = 0, f = 1.0 MHz)
Small−Signal Current Gain
(I_C = 2.0 mAdc, V_CE = 10 Vdc, f = 20 MHz)
1. R_qJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
http://onsemi.com
TO−92 (TO−226AA)
CASE 29−04
STYLE 1
1
23
COLLECTOR
3
2
BASE
1
EMITTER
Symbol
Min
Typ
Max
V_(BR)CEO
20
—
—
V_(BR)CBO
30
—
—
V_(BR)EBO
3.0
—
—
I_CBO
—
—
50
—
—
1.0
h_FE
25
75
—
f_T
C_obo
h_fe
700
800
—
—
1.25
2.5
20
—
—
Unit
Vdc
Vdc
Vdc
nAdc
mAdc
—
MHz
pF
—
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 1
Publication Order Number:
MPS6507/D