MPS650 Datasheet, PDF (1/6 Pages) Motorola, Inc – Amplifier Transistors

MPS650, MPS651, NPN
MPS750, MPS751, PNP
MPS651 and MPS751 are Preferred Devices
Amplifier Transistors
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
MPS650 MPS651
Symbol MPS750 MPS751 Unit
Collector −Emitter Voltage
V_CE
Collector −Base Voltage
V_CB
Emitter −Base Voltage
V_EB
Collector Current − Continuous
I_C
Total Power Dissipation @
P_D
T_A = 25°C
Derate above 25°C
40
60
60
80
5.0
2.0
625
5.0
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Total Power Dissipation @
P_D
T_C = 25°C
Derate above 25°C
1.5
W
12
mW/°C
Operating and Storage Junction T_J, T_stg
−55 to +150
°C
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance,
Junction−to−Ambient
R_qJA
200
Thermal Resistance,
Junction−to−Case
R_qJC
83.3
Unit
°C/W
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
COLLECTOR
3
COLLECTOR
3
2
BASE
2
BASE
1
EMITTER
NPN
1
EMITTER
PNP
TO−92
CASE 29−11
MARKING
DIAGRAM
MPS
xxx
AYWW
xxx = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
May, 2005 − Rev. 2
Publication Order Number:
MPS650/D