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MPS5179_06 Datasheet, PDF (1/3 Pages) ON Semiconductor – High Frequency Transistor NPN Silicon
MPS5179
Preferred Device
High Frequency Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
12
20
2.5
50
200
1.14
Unit
Vdc
Vdc
Vdc
mAdc
W
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
300
W
1.71
mW/°C
Storage Temperature Range
Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
MARKING
DIAGRAM
MPS
5179
TO−92
CASE 29−11
AYWW G
G
1
2
STYLE 1
3
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 3
MPS5179 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPS5179
MPS5179G
Package
TO−92
TO−92
(Pb−Free)
Shipping†
5000 Units/Box
5000 Units/Box
MPS5179RLRA TO−92 2000/Tape & Reel
MPS5179RLRAG TO−92 2000/Tape & Reel
(Pb−Free)
MPS5179RLRP TO−92 2000/Tape & Ammo
MPS5179RLRPG TO−92 2000/Tape & Ammo
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MPS5179/D