MPS5179 Datasheet, PDF (1/4 Pages) ON Semiconductor – High Frequency Transistor(NPN Silicon)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS5179/D
High Frequency Transistor
NPN Silicon
COLLECTOR
3
2
BASE
MPS5179
Motorola Preferred Device
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
12
Vdc
20
Vdc
2.5
Vdc
50
mAdc
200
mW
1.14
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
300
mW
1.71
mW/°C
Storage Temperature Range
Tstg
– 55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Sustaining Voltage
(IC = 3.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.001 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 0.01 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Symbol
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE(sat)
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min
Max
Unit
12
—
Vdc
20
—
Vdc
2.5
—
Vdc
µAdc
—
0.02
—
1.0
25
250
—
—
0.4
Vdc
—
1.0
Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996