MPS4250_10 Datasheet, PDF (1/3 Pages) ON Semiconductor – PNP Silicon Transistor

MPS4250
Transistor
PNP Silicon
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T_A = 25°C
Derate above 25°C
V_CEO
V_CES
V_CBO
V_EBO
I_C
P_D
−40
−40
−40
−5.0
−50
625
5.0
Vdc
Vdc
Vdc
Vdc
mAdc
W
mW/°C
Total Device Dissipation @ T_C = 25°C
P_D
1.5
W
Derate above 25°C
12
mW/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient R_qJA
200
°C/W
Thermal Resistance, Junction−to−Case
R_qJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
123
STRAIGHT LEAD
BULK PACK
TO−92 1 WATT
(TO−226)
1
2
3
CASE 29−10
STYLE 1
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPS
4250
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
August, 2010 − Rev. 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MPS4250G
TO−92 5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MPS4250/D