MPS4250 Datasheet, PDF (1/4 Pages) Motorola, Inc – Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Transistor
PNP Silicon
Order this document
by MPS4250/D
MPS4250
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCES
VCBO
VEBO
IC
PD
–40
Vdc
–40
Vdc
–40
Vdc
–5.0
Vdc
—
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
mW
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –5.0 mA)
Collector – Emitter Sustaining Voltage(1)
(IC = –5.0)
Collector – Base Breakdown Voltage
(IC = –10 mA)
Emitter – Base Breakdown Voltage
(IE = –10 mA)
Collector Cutoff Current
(VCB = –50 V)
(VCB = –40 V, TA = 65°C)
Emitter Cutoff Current
(VEB = –3.0 V)
1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%.
V(BR)CES
V(BR)CEO(sus)
V(BR)CBO
V(BR)EBO
ICBO
IEBO
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min
Max
Unit
–40
—
Vdc
–40
—
Vdc
–40
—
Vdc
–5.0
—
Vdc
—
–10
nA
—
–3.0
mA
—
–20
nA
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1