MPS4126 Datasheet, PDF (1/4 Pages) ON Semiconductor – Amplifier Transistor(PNP Silicon)

ON Semiconductort
Amplifier Transistor
PNP Silicon
MPS4126
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
VCE
VCB
VEB
IC
PD
PD
TJ, Tstg
Value
–25
–25
–4.0
–200
625
5.0
1.5
12
–55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
Symbol
Max
R_qJA
200
R_qJC
83.3
Unit
°C/W
°C/W
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
COLLECTOR
3
2
BASE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = –10 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IC = 0, IE = –10 mA)
Collector Cutoff Current
(VCB = –20 V, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 V, IC = 0)
1
EMITTER
Symbol
Min
Max
Unit
V(BR)CEO
Vdc
–25
—
V(BR)CBO
Vdc
–25
—
V(BR)EBO
Vdc
–4.0
—
ICBO
nAdc
—
–50
IEBO
nAdc
—
–50
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 2
Publication Order Number:
MPS4126/D