MPS4124 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistor
NPN Silicon
Order this document
by MPS4124/D
MPS4124
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VCE
25
VCB
30
VEB
5.0
IC
200
PD
625
5.0
Total Power Dissipation @ TC = 25°C
PD
1.5
Derate above 25°C
12
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mA, IE = 0)
Emitter – Base Breakdown Voltage
(IC = 0, IE = 10 mA)
Collector Cutoff Current
(VCB = 20 V, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 V, IC = 0)
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min
Max
Unit
Vdc
25
—
Vdc
30
—
Vdc
5.0
—
nAdc
—
50
nAdc
—
50
(Replaces MPS4123/D)
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1