MPS3906 Datasheet, PDF (1/8 Pages) Motorola, Inc – General Purpose Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistor
PNP Silicon
Order this document
by MPS3906/D
MPS3906
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–40
–40
–5.0
–200
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –3.0 Vdc)
Base Cutoff Current
(VCE = –30 Vdc, VEB(off) = –3.0 Vdc)
1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%.
1
23
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
Max
Unit
V(BR)CEO –40
—
Vdc
V(BR)CBO –40
—
Vdc
V(BR)EBO –5.0
—
Vdc
ICEX
—
–50
nAdc
IBL
—
–50
nAdc
REV 1
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1