MPS3904 Datasheet, PDF (1/8 Pages) Motorola, Inc – General Purpose Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistor
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
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by MPS3904/D
MPS3904
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
40
VCBO
60
VEBO
6.0
IC
100
PD
625
5.0
Total Power Dissipation @ TA = 60°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
450
PD
1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 µAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VEB(off) = 3.0 Vdc)
Base Cutoff Current
(VCE = 30 Vdc, VEB(off) = 3.0 Vdc)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
mW
Watts
mW/°C
°C
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Unit
°C/W
°C/W
Symbol
Min
V(BR)CEO
40
V(BR)CBO
60
V(BR)EBO
6.0
ICEX
—
IBL
—
Max
Unit
—
Vdc
—
Vdc
—
Vdc
50
nAdc
50
nAdc
REV 1
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1